The Semiconductor Roadmap
             The SIA (Semiconductor Industry Association) roadmap projects a continuing 
               miniaturization of silicon semiconductor devices for the next 15 years. 
             International Technology Roadmap for Semiconductors (ITRS): public.itrs.net
                                          www.iso.gmu.edu
                                         J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 2
                                        Moore's Law
         Gordon Moore, co-founder of Intel, 1965
                www.physics.udel.edu
                                                                                    dot.che.gatech.edu
         Hg arc lamp  =436, 365, 248 nm, KrF laser  =248 nm, ArF laser  =193 nm, F  laser  =157 nm
                      0                              0                    0           2      0
                                                              J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 3
                              Future Lithography Systems
                   Prcatically all materials absorb strongly between =157 and 14 nm
                   Extreme UV                     laser based plasma sources =10-14 nm, mirrors, 
                                                  reflection masks
                   X-ray                          X-ray tube, synchrotron ~1 nm, Fresnel lenses
                   Ion projection, (Focused Ion Beam)
                     Synchrotron radiation based lithography 
                          Lawrence Berkeley National Laboratory (2002)                     oemagazine.com
                                                                                                     EUV lithography unit
                                                                                       J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 4
                    Electronic Elements: Challenges
              www.unine.ch
        •
          scaling rules
        •
          gate dielectric silicon-dioxide ~ 1.5 nm
                      => high-k materials as Al O , TiO ,...
                                                        2   3      2
        •
           dopant fluctuations, noise
        •
           thermodynamics
        •
           quantum effects: discretization and tunneling
        •
           logic circuit architecture
                                                                                                  www-hpc.jpl.nasa.gov
                                                                              J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 5
                 Possible Future Directions
            Advanced MOSFET concepts
            3D architecture
            Superconducting electronics
            Single electron devices                                     from [3]
            Spintronics
            Quantum computing: qubits
            DNA computing
                                             J.R.Krenn – Nanotechnology – CERN 2003 – Part 2 page 6